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| NTE2579 Silicon NPN Transistor High Voltage, High Speed Switch Features: D Fast Switching Speed D Low Saturation Voltage Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Collector Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Rqange, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Fall Time Symbol ICBO IEBO hFE fT VCE(sat) VBE(sat) Test Conditions VCB = 250V, IE = 0 VEB = 5V, IC = 0 VCE = 1V, IC = 1A VCE = 1V, IC = 5A VCE = 10V, IC = 500mA IC = 5A, IB = 500mA IC = 5A, IB = 500mA Min - - 15 10 10 - - 400 200 6 - Typ Max Unit - - - - 40 - - - - - - 100 100 - 50 - 0.8 1.5 - - - 0.3 MHz V V V V V s A A V(BR)CBO IC = 1A, IE = 0 V(BR)CEO IC = 1mA, RBE = V(BR)EBO IE = 1mA, IC = 0 tf VCC = 50V, IC = 5A, IB1 = -IB2 = 500mA, Pulse Width = 20s, Duty Cycle 1% .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab |
Price & Availability of NTE2579
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